Direct growth of graphene-MoS2 heterostructure: Tailored interface for advanced devices

Ultrathin film heterostructures represent the main foundations of numerous modern devices. Recently, 2D materials combined into van der Waals multilayers have emerged as an appealing option to conform with outstanding properties while circumventing interfacial lattice-matching constraints encountered in heteroepitaxial synthesis. Among them, MoS2-Graphene exhibit suitable contact that promote efficient charge injection and transfer. We here report on direct synthesis graphene films MoS2 by Plasma Assisted CVD. assess influence using Sulphur vapor during heal S vacancies, both natural origin induced growth. find grain size increases when relate this effect defect density conductance. The methodologies shown are intrinsically scalable a step forward growth for advanced